Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
نویسندگان
چکیده
منابع مشابه
Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization
Wide bandgap devices such as AlGaN/GaN High Electron Mobility Transistors (HEMT) grown on silicon carbide (SiC) substrate are investigated. Low frequency noise (LFN) measurements have been carried out to evaluate the structural perfection of dual gated HEMT devices featuring 0.25x2x75μm2 gate area: generation-recombination (GR) processes are evidenced. Two sets of GRbulges related respectively ...
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ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2013
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2013.07.020